| PART |
Description |
Maker |
| WF512K64-120G4WM5 WF512K64-90G4WM5 WF512K64-120G4W |
70ns; 5V power supply; 512K x 64 flash module
Flash MCP
512Kx64 5V FLASH MODULE
120ns; 5V power supply; 512K x 64 flash module
90ns; 5V power supply; 512K x 64 flash module
|
WEDC[White Electronic Designs Corporation]
|
| WPS512K8VB-15RJI WPS512K8VB-15RJM WPS512K8VB-17RJI |
3.3V 512K x 8 SRAM, 15ns
3.3V 512K x 8 SRAM, 17ns
3.3V 512K x 8 SRAM, 20ns
|
White Electronic Designs
|
| AM29LV800BT-80DTC2 AM29LV800BT-80DGI2 AM29LV800BT- |
25NS,OTP CERDIP,883C; LEV B FULLY CMPLNT(EPLD)
20NS, OTP, PLCC, COM TEMP(EPLD)
20NS, SOIC, IND TEMP(EPLD)
25NS, SOIC, COM TEMP(EPLD)
20NS,OTP LCC,883C; LEVEL B FULLY CMPLNT(EPLD)
10MHZ, 8 DIP, COM TEMP(FPGA)
10MHZ, 20 PLCC, IND TEMP(FPGA)
10MHZ, 32 TQFP, COM TEMP(FPGA)
10MHZ, 44 PLCC, COM TEMP(FPGA)
30MHZ, 3.3V, 20 PLCC, COM TEMP(FPGA)
8 TSSOP,PB/HALO FREE,IND,1.8V(SERIAL EE)
DIE SALE, 1.8V, 11 MIL(SERIAL EE)
8 PDIP,PB/HALO FREE,IND TEMP,1.8V(SERIAL EE)
65K CONFIG MEM, 20 PLCC, IND TEMP(FPGA)
10MHZ, 20 SOIC, IND TEMP(FPGA)
128K CONFIG MEM, 20 PLCC, COM(FPGA)
EEPROM EEPROM
10MHZ, 8 NSOIC, COM TEMP(FPGA) EEPROM
512K X 16 FLASH 3V PROM, 120 ns, UUC44
10MHZ, 8 LAP, 5K MOQ(FPGA)
10MHZ, 8 N-SOIC, COM TEMP(FPGA)
10MHZ, 20 PLCC, COM TEMP(FPGA)
512K X 16 FLASH 3V PROM, 80 ns, UUC44
|
ADVANCED MICRO DEVICES INC
|
| EDI88130LPSNI EDI88130CS EDI88130CSLM EDI88130CSL3 |
25ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
45ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
17ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
128Kx8 Monolithic SRAM, SMD 5962-89598 128Kx8单片的SRAM，贴962-89598
128Kx8 Monolithic SRAM/ SMD 5962-89598
15ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
20ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
35ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
55ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
|
White Electronic Designs
ETC
Electronic Theatre Controls, Inc.
|
| 5962-88724013X 5962-88724043X 5962-87539053X 5962- |
t(pd): 25ns; t(s): 18ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 20ns; t(s): 17ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to 7.0V; V power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
|
Atmel
|
| P4C1048L-70CWI P4C1048L-45PMB P4C1048L-45SMB P4C10 |
LOW POWER 512K x 8 CMOS STATIC RAM 低功率为512k × 8的CMOS静态RAM
LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 45 ns, PDSO32
LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 45 ns, CDIP32
LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 45 ns, PDIP32
LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 100 ns, PDSO32
LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 100 ns, CDIP32
LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 100 ns, PDIP32
LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 55 ns, CDIP32
LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 70 ns, PDSO32
LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 70 ns, CDIP32
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| K6F8016V3A K6F8016V3A-F K6F8016V3A-TF55 K6F8016V3A |
512K X 16 STANDARD SRAM, 55 ns, PDSO44
From old datasheet system
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IR2011 IR2011SPBF IR2011S IR2011PBF |
V(offset): 200V; 1A; V(out): 10-20V; 80 & 60ns (20ns - max); high and low side driver. For audio class D amplifiers, high power DC-DC SMPS converters, etc.
|
IRF[International Rectifier]
|
| CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV |
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72）流体系结构，通过与总线延迟（带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72）流的SRAM
|
Cypress Semiconductor Corp.
|
| CAT8801YTB-GT3 CAT8801WSD-GT3 CAT8801VSD-GT3 CAT88 |
200 nA Microprocessor Power Supply Supervisors Ultra Low 200 nA Supply Current
POWER SUPPLY SUPPORT CKT, PDSO3
|
ON Semiconductor
|
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